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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD234 DESCRIPTION *With TO-220 package *Complement to type 2SB434 APPLICATIONS *For low frequency power amplifier and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current CONDITIONS Open emitter Open base Open collector VALUE 60 50 6 3 1.5 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 W UNIT V V V A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ,IB=0 IC=1mA ,IE=0 IE=1mA ,IC=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=40V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=1V IE=0 ; VCB=10V,f=1MHz IC=0.5A ; VCE=10V 40 90 3 MIN 50 60 6 TYP. 2SD234 MAX UNIT V V V 1.2 1.5 10 10 240 V V A A pF MHz hFE Classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD234 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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